N-Channel Power MOSFET, 60V Vds, 18A continuous drain current, and 64mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-252 package for surface mounting. It offers a maximum power dissipation of 47W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 6ns turn-on delay and 32ns fall time.
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
Power47W
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Technical Specifications
Infineon IPD640N06LG technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 470pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Rds On Max | 64mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 6ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD640N06LG Datasheet
Download the complete datasheet for Infineon IPD640N06LG to view detailed technical specifications.
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