Infineon
IPD65R225C7
Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2
PackageTO-252-3
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Technical Specifications
Infineon IPD65R225C7 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
11A
Drain to Source Resistance
225mR
Drain to Source Voltage (Vdss)
650V
Element Configuration
Single
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Package Quantity
2500
Packaging
Tape and Reel
Rds On Max
225mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Threshold Voltage
3.5V
Turn-Off Delay Time
48ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD65R225C7 Datasheet
Download the complete datasheet for Infineon IPD65R225C7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.