Infineon
IPD65R660CFD
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3
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Technical Specifications
Infineon IPD65R660CFD technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-252
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IPD65R660CFD Datasheet
Download the complete datasheet for Infineon IPD65R660CFD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.