N-channel silicon power MOSFET featuring 650V drain-to-source voltage and 950mΩ drain-to-source resistance. This surface-mount device, housed in a TO-252-3 package, offers a continuous drain current of 4.5A and a maximum power dissipation of 37W. It operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a fall time of 13.6ns and a turn-off delay time of 41ns.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power37W
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Technical Specifications
Infineon IPD65R950C6ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 13.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 328pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 37W |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C6 |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 6.6ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD65R950C6ATMA1 Datasheet
Download the complete datasheet for Infineon IPD65R950C6ATMA1 to view detailed technical specifications.
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