N-Channel Power MOSFET, 100V Vds, 13A Continuous Drain Current, 78mΩ Rds On. Features 3ns fall time, 9ns turn-on delay, and 13ns turn-off delay. Operates from -55°C to 175°C with 31W power dissipation. Packaged in a TO-252-3 (DPAK) for surface mounting.
PackageTO-252-3
PolarityN-CHANNEL
Power31W
Quick Jump:
Technical Specifications
Infineon IPD78CN10NG technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 716pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Rds On Max | 78mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD78CN10NG Datasheet
Download the complete datasheet for Infineon IPD78CN10NG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
