Infineon
IPD80N06S3-09
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power107W
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Technical Specifications
Infineon IPD80N06S3-09 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
37ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.1nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
107W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
107W
Rds On Max
8.4mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
26ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD80N06S3-09 Datasheet
Download the complete datasheet for Infineon IPD80N06S3-09 to view detailed technical specifications.
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