N-channel Power MOSFET designed for high voltage applications. Features 800V drain-source voltage and 3.9A continuous drain current. Offers a low on-state resistance of 1.4 Ohms. Packaged in a TO-252-3 surface-mount case, this component is suitable for demanding power management tasks. Includes fast switching characteristics with turn-on delay time of 25ns and fall time of 12ns.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPD80R1K4CEBTMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 570pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 1.4R |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD80R1K4CEBTMA1 Datasheet
Download the complete datasheet for Infineon IPD80R1K4CEBTMA1 to view detailed technical specifications.
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