N-channel Power MOSFET featuring 800V drain-source voltage and 0.9 ohm drain-source on-resistance. This single-element silicon device utilizes Metal-Oxide-Semiconductor Field-Effect Transistor technology. Packaged in a TO-252AA (DPAK-3/2) with single terminal position, it operates from -55°C minimum temperature.
Quick Jump:
Technical Specifications
Infineon IPD80R900P7ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD80R900P7ATMA1 Datasheet
Download the complete datasheet for Infineon IPD80R900P7ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.