Infineon
IPD90N03S4L-02
Power Field-Effect Transistor, 90A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
PackageTO-252-3
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Technical Specifications
Infineon IPD90N03S4L-02 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Voltage (Vdss)
30V
Fall Time
13ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Height
2.3mm
Input Capacitance
9.75nF
Lead Free
Lead Free
Length
6.5mm
Max Dual Supply Voltage
30V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Package Quantity
1
Packaging
Tape and Reel
Rds On Max
2.2mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
62ns
Turn-On Delay Time
14ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N03S4L-02 Datasheet
Download the complete datasheet for Infineon IPD90N03S4L-02 to view detailed technical specifications.
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