Infineon
IPD90N04S4L04ATMA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252-3
Power71W
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Technical Specifications
Infineon IPD90N04S4L04ATMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
40V
Fall Time
28ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
4.69nF
Lead Free
Contains Lead
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
71W
On-State Resistance
5.5mR
Package Quantity
2500
Packaging
Tape and Reel
Power Dissipation
71W
Rds On Max
3.8mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
22ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N04S4L04ATMA1 Datasheet
Download the complete datasheet for Infineon IPD90N04S4L04ATMA1 to view detailed technical specifications.
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