Infineon
IPD90N06S3-06
Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN
PackageTO-252
PolarityN-CHANNEL
Power136W
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Technical Specifications
Infineon IPD90N06S3-06 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
55V
Fall Time
73ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
136W
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N06S3-06 Datasheet
Download the complete datasheet for Infineon IPD90N06S3-06 to view detailed technical specifications.
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