Infineon
IPD90N06S4-04
Power Field-Effect Transistor, 90A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 90A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
PackageTO-252-3
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Technical Specifications
Infineon IPD90N06S4-04 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
| Halogen Free | Halogen Free |
| Input Capacitance | 10.4nF |
| Max Dual Supply Voltage | 60V |
| Max Power Dissipation | 150W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD90N06S4-04 Datasheet
Download the complete datasheet for Infineon IPD90N06S4-04 to view detailed technical specifications.
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