N-channel power MOSFET with 60V drain-source voltage and 90A continuous drain current. Features low 5.1mΩ on-state resistance and 107W power dissipation. Operates from -55°C to 175°C, suitable for surface mount applications in a TO-252 package. Includes fast switching characteristics with an 8ns fall time.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power107W
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Technical Specifications
Infineon IPD90N06S405ATMA2 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 5.1mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Rds On Max | 5.1mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD90N06S405ATMA2 Datasheet
Download the complete datasheet for Infineon IPD90N06S405ATMA2 to view detailed technical specifications.
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