N-channel power MOSFET featuring 60V drain-source voltage and 90A continuous drain current. Offers low on-state resistance of 3.5mΩ (Rds On Max) and 2.7mΩ (Drain to Source Resistance). Designed for surface mount applications in a TO-252 package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 150W. Suitable for automotive applications with AEC-Q101 qualification.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power150W
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Technical Specifications
Infineon IPD90N06S4L03ATMA2 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Resistance
2.7mR
Drain to Source Voltage (Vdss)
60V
Fall Time
20ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Input Capacitance
13nF
Lead Free
Contains Lead
Max Dual Supply Voltage
60V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Channels
1
On-State Resistance
3.5mR
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
150W
Rds On Max
3.5mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, OptiMOS™
Turn-Off Delay Time
140ns
Turn-On Delay Time
21ns
Weight
0.139332oz
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N06S4L03ATMA2 Datasheet
Download the complete datasheet for Infineon IPD90N06S4L03ATMA2 to view detailed technical specifications.
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