Infineon
IPD90N06S4L05ATMA1
Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252-3
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Technical Specifications
Infineon IPD90N06S4L05ATMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Voltage (Vdss)
60V
Fall Time
13ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Input Capacitance
8.18nF
Max Dual Supply Voltage
60V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
107W
Package Quantity
2500
Packaging
Tape and Reel
Rds On Max
4.6mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
80ns
Turn-On Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N06S4L05ATMA1 Datasheet
Download the complete datasheet for Infineon IPD90N06S4L05ATMA1 to view detailed technical specifications.
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