Infineon
IPD90N06S4L06ATMA2
Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon IPD90N06S4L06ATMA2 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Voltage (Vdss)
60V
Halogen Free
Halogen Free
Input Capacitance
5.68nF
Lead Free
Contains Lead
Max Dual Supply Voltage
60V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
6.3mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, OptiMOS™
Weight
0.139332oz
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N06S4L06ATMA2 Datasheet
Download the complete datasheet for Infineon IPD90N06S4L06ATMA2 to view detailed technical specifications.
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