P-channel power MOSFET, 40V drain-source breakdown voltage, 90A continuous drain current, and 4.3mΩ on-state resistance. Features a TO-252 surface-mount package, 125W power dissipation, and a maximum operating temperature of 175°C. Includes a threshold voltage of -1.7V and a gate-source voltage rating of 16V. RoHS compliant and halogen-free.
PackageTO-252-3
MountingSurface Mount
Power125W
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Technical Specifications
Infineon IPD90P04P4L04ATMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
-40V
Drain to Source Resistance
5.1mR
Drain to Source Voltage (Vdss)
-40V
Fall Time
60ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Height
2.35mm
Input Capacitance
11.57nF
Lead Free
Contains Lead
Max Dual Supply Voltage
-40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
On-State Resistance
4.3mR
Package Quantity
2500
Packaging
Cut Tape
Power Dissipation
125W
Rds On Max
4.3mR
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
-1.7V
Turn-Off Delay Time
140ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90P04P4L04ATMA1 Datasheet
Download the complete datasheet for Infineon IPD90P04P4L04ATMA1 to view detailed technical specifications.
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