N-Channel Power MOSFET, 900V drain-source voltage, 1.2Ω Rds On, and 5.1A continuous drain current. Features include 70ns turn-on delay, 40ns fall time, and 400ns turn-off delay. This silicon Metal-oxide Semiconductor FET operates within a -55°C to 150°C temperature range with a maximum power dissipation of 83W. Packaged in a TO-252-3 plastic housing, it is RoHS compliant.
PackageTO-252-3
Voltage900V
Current51A
Power83W
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Technical Specifications
Infineon IPD90R1K2C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
5.1A
Current
51A
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
710pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
83W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
3V
Turn-Off Delay Time
400ns
Turn-On Delay Time
70ns
Voltage
900V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90R1K2C3 Datasheet
Download the complete datasheet for Infineon IPD90R1K2C3 to view detailed technical specifications.
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