Automotive-grade, AEC-Q101 qualified N-channel Power MOSFET featuring 40V drain-source voltage and 20A continuous drain current. Optimized for low on-state resistance with a maximum of 7.6mΩ (7mΩ typical), enabling efficient power handling up to 65W. Designed for surface mount applications with a wide operating temperature range from -55°C to 175°C. This RoHS compliant component is supplied on tape and reel, with a package quantity of 5000 units.
MountingSurface Mount
Power65W
Quick Jump:
Technical Specifications
Infineon IPG20N04S408AATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 40V |
| FET Type | 2 N-Channel |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.94nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| On-State Resistance | 7.6mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 65W |
| Rds On Max | 7.6mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N04S408AATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N04S408AATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
