Infineon
IPG20N04S4L-08
Power Field-Effect Transistor, 20A I(D), 40V, 0.0082ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Technical Specifications
Infineon IPG20N04S4L-08 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Voltage (Vdss)
40V
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Height
1mm
Input Capacitance
2.35nF
Length
5.15mm
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
54W
Packaging
Tape and Reel
Rds On Max
8.2mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
40ns
Turn-On Delay Time
7ns
Width
6.15mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPG20N04S4L-08 Datasheet
Download the complete datasheet for Infineon IPG20N04S4L-08 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.