N-Channel Power MOSFET featuring 40V drain-source voltage and 20A continuous drain current. This surface-mount device offers a low 11.6mΩ on-state resistance and 1.99nF input capacitance. Designed for automotive applications, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 41W. The component is RoHS compliant and packaged on tape and reel.
MountingSurface Mount
Power41W
Quick Jump:
Technical Specifications
Infineon IPG20N04S4L11ATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 10.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.99nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| On-State Resistance | 11.6mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 41W |
| Rds On Max | 11.6mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N04S4L11ATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N04S4L11ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
