N-channel silicon power MOSFET featuring 60V drain-source voltage and 20A continuous drain current. Offers a low on-resistance of 0.0155 ohms. This 8-terminal, TDSON-8 packaged device incorporates two elements for enhanced performance.
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Technical Specifications
Infineon IPG20N06S415AATMA1 technical specifications.
General
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPG20N06S415AATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N06S415AATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.