N-Channel Power MOSFET, 60V Vds, 20A continuous drain current, and 15.5mΩ Rds(on). Features dual element configuration, 50W power dissipation, and a maximum operating temperature of 175°C. Surface mount TDSON-8 package with tape and reel packaging. AEC-Q101 qualified for automotive applications.
MountingSurface Mount
Power50W
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Technical Specifications
Infineon IPG20N06S415ATMA2 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 15.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 2.26nF |
| Lead Free | Contains Lead |
| Length | 5.15mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| On-State Resistance | 15.5mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 50W |
| Rds On Max | 15.5mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 12ns |
| Width | 6.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N06S415ATMA2 Datasheet
Download the complete datasheet for Infineon IPG20N06S415ATMA2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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