N-Channel Power MOSFET featuring 60V drain-source voltage and 20A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 26mΩ Rds On resistance and operates with a 16V gate-source voltage. Designed for surface mounting, it boasts fast switching speeds with a 5ns turn-on delay and 10ns fall time. Maximum power dissipation is 33W, with an operating temperature range of -55°C to 175°C. This RoHS compliant component is presented in TDSON-8 packaging.
MountingSurface Mount
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Technical Specifications
Infineon IPG20N06S4L26ATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.43nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N06S4L26ATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N06S4L26ATMA1 to view detailed technical specifications.
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