N-Channel Power MOSFET, 100V Vdss, 20A ID, featuring 22mR Rds On for efficient power switching. This surface-mount device offers a low on-state resistance of 28mR and a maximum power dissipation of 60W. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching speeds with a turn-on delay of 5ns and a fall time of 18ns. The TDSON-8-10 package provides a compact solution for demanding applications.
MountingSurface Mount
Power60W
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Technical Specifications
Infineon IPG20N10S4L22AATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 18ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 1.755nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| On-State Resistance | 28mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Power Dissipation | 60W |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N10S4L22AATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N10S4L22AATMA1 to view detailed technical specifications.
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