N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 20A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-state resistance of 35mΩ (Rds On Max) and a maximum power dissipation of 43W. Designed for surface mount applications, it operates within a temperature range of -55°C to 175°C and includes 2 N-Channel elements. The component is RoHS compliant and packaged in tape and reel.
MountingSurface Mount
Power43W
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Technical Specifications
Infineon IPG20N10S4L35AATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 1.105nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| On-State Resistance | 45mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 43W |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 3ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPG20N10S4L35AATMA1 Datasheet
Download the complete datasheet for Infineon IPG20N10S4L35AATMA1 to view detailed technical specifications.
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