IPI020N06NAKSA1

Power Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

MountingThrough Hole

PolarityN-CHANNEL

Power214W

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Infineon IPI020N06NAKSA1 technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	120A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	2R
Drain to Source Voltage (Vdss)	60V
Fall Time	19ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	7.8nF
Lead Free	Contains Lead
Max Dual Supply Voltage	60V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	214W
Mount	Through Hole
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	214W
Rds On Max	2mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	51ns
Turn-On Delay Time	24ns