N-channel MOSFET with 80V drain-source breakdown voltage and 100A continuous drain current. Features low 2.8mΩ drain-to-source resistance and 300W maximum power dissipation. Designed for through-hole mounting in a TO-262 package, operating from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 28ns and fall time of 33ns.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPI028N08N3G technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 2.8mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 14.2nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 2.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 86ns |
| Turn-On Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI028N08N3G Datasheet
Download the complete datasheet for Infineon IPI028N08N3G to view detailed technical specifications.
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