IPI029N06NAKSA1

Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

PolarityN-CHANNEL

Power136W

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Infineon IPI029N06NAKSA1 technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	24A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	2.9mR
Drain to Source Voltage (Vdss)	60V
Fall Time	8ns
Halogen Free	Halogen Free
Input Capacitance	4.1nF
Lead Free	Contains Lead
Max Dual Supply Voltage	60V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	3W
On-State Resistance	2.9mR
Package Quantity	250
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	136W
Rds On Max	2.9mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	30ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.