N-Channel Power MOSFET featuring 60V drain-source voltage and 120A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 3.2mR and a maximum power dissipation of 188W. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 175°C. Key switching parameters include a 35ns turn-on delay and a 20ns fall time.
PackageTO-262-3
MountingThrough Hole
Power188W
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Technical Specifications
Infineon IPI032N06N3GAKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 11.177mm |
| Input Capacitance | 13nF |
| Lead Free | Contains Lead |
| Length | 10.36mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Mount | Through Hole |
| On-State Resistance | 3.2mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 188W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 35ns |
| Width | 4.572mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI032N06N3GAKSA1 Datasheet
Download the complete datasheet for Infineon IPI032N06N3GAKSA1 to view detailed technical specifications.
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