N-channel MOSFET with 60V drain-source breakdown voltage and 90A continuous drain current. Features low 3.7mΩ drain-source resistance and 167W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in TO-262-3, this RoHS compliant component offers fast switching with turn-on delay of 25ns and fall time of 13ns.
PackageTO-262-3
PolarityN-CHANNEL
Power167W
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Technical Specifications
Infineon IPI037N06L3G technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 13nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI037N06L3G Datasheet
Download the complete datasheet for Infineon IPI037N06L3G to view detailed technical specifications.
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