N-channel power MOSFET featuring 80V drain-source voltage and 100A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3.75mΩ drain-source resistance. Designed for through-hole mounting in a TO-262-3 package, it operates from -55°C to 175°C with a maximum power dissipation of 214W. Key switching characteristics include a 23ns turn-on delay and 14ns fall time.
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Infineon IPI037N08N3GXKSA1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 8.11nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 3.75mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 23ns |
| Width | 4.52mm |
| RoHS | Compliant |
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