Infineon
IPI040N06N3G
Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
PackageTO-262-3
PolarityN-CHANNEL
Power188W
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Technical Specifications
Infineon IPI040N06N3G technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 11nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 188W |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI040N06N3G Datasheet
Download the complete datasheet for Infineon IPI040N06N3G to view detailed technical specifications.
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