The IPI052NE7N3GAKSA1 is a MOSFET N-Channel device with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 80A and is packaged in a rail/through hole configuration. The device is RoHS compliant and not radiation hardened. The MOSFET has a fall time of 8ns, a turn-off delay time of 30ns, and a turn-on delay time of 14ns.
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon IPI052NE7N3GAKSA1 technical specifications.
General
| Continuous Drain Current (ID) | 80A |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI052NE7N3GAKSA1 Datasheet
Download the complete datasheet for Infineon IPI052NE7N3GAKSA1 to view detailed technical specifications.
No datasheet is available for this part.