N-Channel Power MOSFET, 120V Drain to Source Voltage, 100A Continuous Drain Current, and 7.6mΩ On-State Resistance. This silicon, metal-oxide semiconductor FET features a TO-262-3 package for through-hole mounting. With a maximum power dissipation of 188W and an operating temperature range of -55°C to 175°C, it offers fast switching speeds with a 24ns turn-on delay and 39ns turn-off delay. The component is RoHS compliant and Halogen Free.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power188W
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Technical Specifications
Infineon IPI076N12N3GAKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 120V |
| Drain to Source Resistance | 7.6mR |
| Drain to Source Voltage (Vdss) | 120V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.64nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 120V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 7.6mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 188W |
| Radiation Hardening | No |
| Rds On Max | 7.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI076N12N3GAKSA1 Datasheet
Download the complete datasheet for Infineon IPI076N12N3GAKSA1 to view detailed technical specifications.
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