The IPI086N10N3GXKSA1 is a 100V MOSFET with a maximum continuous drain current of 80A. It features a TO-262-3 package and is designed for through hole mounting. The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 125W. It is lead free and halogen free, and compliant with RoHS regulations.
PackageTO-262-3
MountingThrough Hole
Power125W
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Technical Specifications
Infineon IPI086N10N3GXKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.98nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 8.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI086N10N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPI086N10N3GXKSA1 to view detailed technical specifications.
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