IPI08CN10NG

Name: IPI08CN10NG Infineon
Brand: Infineon
SKU: IPI08CN10NG

Power Field-Effect Transistor, 95A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

PackageTO-262

MountingThrough Hole

PolarityN-CHANNEL

Power167W

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Infineon IPI08CN10NG technical specifications.

Package/Case	TO-262
Continuous Drain Current (ID)	95A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	8.5mR
Drain to Source Voltage (Vdss)	100V
Fall Time	6ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	6.66nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	167W
Mount	Through Hole
Nominal Vgs	3V
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	167W
Rds On Max	8.5mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	OptiMOS™
Threshold Voltage	3V
Turn-Off Delay Time	26ns