IPI100N06S3L-04

Power Field-Effect Transistor, 100A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

Current Rating100A

MountingThrough Hole

PolarityN-CHANNEL

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Infineon IPI100N06S3L-04 technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	100A
Current Rating	100A
Drain to Source Breakdown Voltage	55V
Drain to Source Voltage (Vdss)	55V
Fall Time	55ns
Gate to Source Voltage (Vgs)	16V
Input Capacitance	17.27nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	214W
Mount	Through Hole
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	214W
Rds On Max	3.8mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	82ns
DC Rated Voltage	55V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.