IPI100P03P3L-04

Power Field-Effect Transistor, 100A I(D), 30V, 0.0043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

Resistance0.004R

MountingThrough Hole

PolarityP-CHANNEL

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Infineon IPI100P03P3L-04 technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	100A
Drain to Source Breakdown Voltage	-30V
Drain to Source Voltage (Vdss)	30V
Fall Time	180ns
Gate to Source Voltage (Vgs)	5V
Input Capacitance	9.3nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	200W
Mount	Through Hole
Package Quantity	500
Packaging	Rail/Tube
Polarity	P-CHANNEL
Power Dissipation	200W
Rds On Max	4.3mR
Resistance	0.004R
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	200ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.