N-Channel Power MOSFET featuring 150V drain-source voltage and 83A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 11.1mΩ drain-source resistance and 214W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 175°C. The component is RoHS compliant and halogen-free.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power214W
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Technical Specifications
Infineon IPI111N15N3GAKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 83A |
| Drain to Source Resistance | 10.8mR |
| Drain to Source Voltage (Vdss) | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 3.23nF |
| Lead Free | Contains Lead |
| Length | 10.36mm |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Rds On Max | 11.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 17ns |
| Width | 4.52mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI111N15N3GAKSA1 Datasheet
Download the complete datasheet for Infineon IPI111N15N3GAKSA1 to view detailed technical specifications.
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