IPI11N03LA

Power Field-Effect Transistor, 30A I(D), 25V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

Current Rating30A

MountingThrough Hole

PolarityN-CHANNEL

Quick Jump:

Infineon IPI11N03LA technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	30A
Current Rating	30A
Drain to Source Breakdown Voltage	25V
Drain to Source Voltage (Vdss)	25V
Fall Time	2.8ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.358nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	52W
Mount	Through Hole
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	52W
Rds On Max	11.5mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	20ns
DC Rated Voltage	25V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.