IPI120N04S302AKSA1

Power Field-Effect Transistor, 120A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN

PackageTO-262-3

PolarityN-CHANNEL

Power300W

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Infineon IPI120N04S302AKSA1 technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	120A
Drain to Source Breakdown Voltage	40V
Drain to Source Voltage (Vdss)	40V
Fall Time	18ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	14.3nF
Lead Free	Contains Lead
Max Dual Supply Voltage	40V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Rds On Max	2.3mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	57ns
Turn-On Delay Time	35ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.