N-channel power MOSFET featuring 60V drain-source voltage and 120A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.8mΩ on-state resistance and 188W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 25ns turn-on delay and 10ns fall time.
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| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 15.75nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Mount | Through Hole |
| Number of Channels | 1 |
| On-State Resistance | 2.8mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 188W |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.084199oz |
| RoHS | Compliant |
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