IPI12CN10NG

Power Field-Effect Transistor, 67A I(D), 100V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

PackageTO-262

MountingThrough Hole

PolarityN-CHANNEL

Power125W

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Infineon IPI12CN10NG technical specifications.

Package/Case	TO-262
Continuous Drain Current (ID)	67A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	12.9mR
Drain to Source Voltage (Vdss)	100V
Fall Time	8ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4.32nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	125W
Mount	Through Hole
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	125W
Rds On Max	12.9mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	OptiMOS™
Threshold Voltage	3V
Turn-Off Delay Time	32ns