N-channel enhancement mode power MOSFET featuring 120V drain-source voltage and 56A continuous drain current. This single-element transistor utilizes OptiMOS process technology and is housed in a TO-262 (I2PAK) package with a 3-pin configuration and tab. Key specifications include a maximum drain-source on-resistance of 14.7 mOhm at 10V and a maximum power dissipation of 107W, operating across a temperature range of -55°C to 175°C.
PackageTO-262
MountingThrough Hole
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Technical Specifications
Infineon IPI147N12N3 G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-262AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 120V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 56A |
| Maximum Drain Source Resistance | 14.7@10VmOhm |
| Typical Gate Charge @ Vgs | 37@10VnC |
| Typical Gate Charge @ 10V | 37nC |
| Typical Input Capacitance @ Vds | 2420@60VpF |
| Maximum Power Dissipation | 107000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPI147N12N3 G Datasheet
Download the complete datasheet for Infineon IPI147N12N3 G to view detailed technical specifications.
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