IPI16CN10NG

Power Field-Effect Transistor, 53A I(D), 100V, 0.0162ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

PackageTO-262-3

MountingThrough Hole

PolarityN-CHANNEL

Power100W

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Infineon IPI16CN10NG technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	53A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	16.2mR
Drain to Source Voltage (Vdss)	100V
Fall Time	7ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	3.22nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	100W
Mount	Through Hole
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	100W
Rds On Max	16.2mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	27ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.