N-channel Power MOSFET, OptiMOS technology, 100V drain-source voltage, 43A continuous drain current. Features 18mΩ maximum drain-source resistance at 10V gate-source voltage. Packaged in a TO-262 (I2PAK) through-hole plastic package with 3 pins and a tab. Operates from -55°C to 175°C with a maximum power dissipation of 71W.
PackageTO-262
MountingThrough Hole
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Technical Specifications
Infineon IPI180N10N3 G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-262AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 43A |
| Maximum Drain Source Resistance | 18@10VmOhm |
| Typical Gate Charge @ Vgs | 19@10VnC |
| Typical Gate Charge @ 10V | 19nC |
| Typical Input Capacitance @ Vds | 1350@50VpF |
| Maximum Power Dissipation | 71000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPI180N10N3 G Datasheet
Download the complete datasheet for Infineon IPI180N10N3 G to view detailed technical specifications.
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