The IPI200N15N3GHKSA1 is a power MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 50A and a gate to source voltage rating of 20V. The device is packaged in a rail/through hole configuration and is not radiation hardened. The turn-on and turn-off delay times are 14ns and 23ns, respectively, with a fall time of 6ns.
MountingThrough Hole
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Technical Specifications
Infineon IPI200N15N3GHKSA1 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI200N15N3GHKSA1 Datasheet
Download the complete datasheet for Infineon IPI200N15N3GHKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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