N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 22A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 14.9mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 31W. Designed for efficient switching, it exhibits a 2ns fall time and 3ns turn-on delay. Packaged in a TO-262-3 configuration, this RoHS and Halogen Free component operates across a wide temperature range from -55°C to 175°C.
PackageTO-262-3
PolarityN-CHANNEL
Power31W
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Technical Specifications
Infineon IPI22N03S4L-15 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 980pF |
| Length | 10.36mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Rds On Max | 14.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3ns |
| Width | 4.52mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI22N03S4L-15 Datasheet
Download the complete datasheet for Infineon IPI22N03S4L-15 to view detailed technical specifications.
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