N-channel MOSFET with 100V drain-source breakdown voltage and 20A continuous drain current. Features 50mΩ maximum drain-source on-resistance and 3V threshold voltage. Operates across a -55°C to 175°C temperature range with 44W maximum power dissipation. Packaged in TO-262-3, this RoHS compliant component offers fast switching with 3ns fall time and 10ns turn-on delay.
PackageTO-262-3
PolarityN-CHANNEL
Power44W
Quick Jump:
Technical Specifications
Infineon IPI50CN10NG technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.09nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 44W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI50CN10NG Datasheet
Download the complete datasheet for Infineon IPI50CN10NG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.